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| 2SK3337-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS IAR *2 EAV *1 PD Tch Tstg Rating 1000 7 28 30 7 463 255 +150 -55 to +150 Unit V A A V A mJ W C C < *2 Tch=150C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=17.3mH, Vcc=100V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=1000V VGS=0V VGS=30V VDS=0V ID=3.5A VGS=10V ID=3.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=7A VGS=10V RGS=10 Vcc=500V ID=7A VGS=10V L=17.3 mH Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Min. 100 2.5 Tch=25C Tch=125C Typ. Max. Units V V A mA nA S pF 3.0 3.5 10 500 0.2 1.0 10 100 1.54 2.0 2.7 5.5 1480 2220 170 255 75 113 25 38 50 75 160 240 70 105 84 126 23 35 31 47 7 1.00 1.50 1.6 15.0 ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.490 50.0 Units C/W C/W 1 2SK3337-01 Characteristics Allowable Power Dissipation PD=f(Tc) 300 10 FUJI POWER MOSFET Safe operating area ID=f(VDS):Single Pulse,Tc=25C 2 250 t= 1s 200 10 1 10s D.C. PD [W] 150 ID [A] 100s 1ms 100 10 0 t 50 T D= t T 10ms 100ms 0 0 25 50 75 100 125 150 10 -1 10 1 10 2 10 3 Tc [C] VDS [V] Typical Output Characteristics ID=f(VDS):80s pulse test,Tch=25C 14 10 12 20V 10V 7V 10 6.0V 1 Typical Transfer Characteristic ID=f(VGS):80s pulse test,VDS=25V,Tch=25C ID [A] 5.5V 6 ID[A] 5.0V 0.1 VGS=4.5V 0.01 0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 1 2 3 4 5 6 7 8 8 4 2 0 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C 5 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s pulse test,Tch=25C VGS=4.5V 4 10 5.0V 5.5V RDS(on) [ ] 3 6.0V gfs [S] 1 7V 2 10V 20V 1 0.1 0 0.1 1 10 0 2 4 6 8 10 12 14 16 ID [A] ID [A] 2 2SK3337-01 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3.5A,VGS=10V 8 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 5.0 4.5 7 4.0 6 3.5 5 max. VGS(th) [V] RDS(on) [ ] 3.0 2.5 2.0 typ. 4 3 max. 2 typ. min. 1.5 1.0 1 0.5 0.0 -50 -25 0 25 50 75 100 125 150 0 -50 -25 0 25 50 75 100 125 150 Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=7A,Tch=25C 25 10 -7 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 20 10 Vcc= 200V 500V 15 800V -8 VGS [V] C [F] 10 -9 Ciss 10 Coss 10 5 -10 Crss 0 0 50 100 150 200 10 -11 10 -2 10 -1 10 0 10 1 10 2 Qg [C] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s pulse test,Tch=25C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 10 td(off) IF [A] t [ns] 10 2 tf 1 tr td(on) 0.1 0.00 10 0.25 0.50 0.75 1.00 1.25 1.50 1 10 -1 10 0 10 1 VSD [V] ID [A] 3 2SK3337-01 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=100V,I(AV)<=7A 500 FUJI POWER MOSFET Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t/T 10 0 0.5 400 0.2 10 -1 Zth(ch-c) [K/W] 0.1 0.05 0.02 0.01 300 EAV [mJ] 10 -2 0 t D= T t T 200 100 10 -5 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t [s] 0 0 25 50 75 100 125 150 starting Tch [C] 4 |
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